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lang=EN-GB><STRONG>Poštovani,</STRONG></SPAN><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 12pt; mso-ansi-language: EN-GB; mso-fareast-font-family: 'Times New Roman'; mso-fareast-language: EN-US; mso-bidi-language: AR-SA"
lang=EN-GB><BR><SPAN style="FONT-FAMILY: Arial"><STRONG>podsjećamo Vas na
seminar na</STRONG></SPAN></SPAN><SPAN
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lang=EN-GB> </SPAN><STRONG><SPAN
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lang=EN-GB>Institutu za fiziku u <FONT color=#ff0000>utorak, 22. prosinca u
</FONT><SPAN style="COLOR: red">11:00 </SPAN><SPAN
style="COLOR: black">sati:</SPAN></SPAN></STRONG></FONT></DIV>
<DIV><FONT size=2 face=Arial><STRONG><SPAN
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<DIV><FONT size=2 face=Arial><STRONG><SPAN
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<P style="MARGIN: 0cm 0cm 10pt" class=MsoNormal><SPAN
style="mso-fareast-language: HR; mso-no-proof: yes" lang=HR><IMG
src="cid:E9234FB93810430DABE473B4D7246C1F@if.local" width=604 height=129
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<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 3pt 0cm"
class=MsoNormal align=center><B style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 14pt" lang=HR>ZAJEDNIČKI
KOLOKVIJ<o:p></o:p></SPAN></B></P>
<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 3pt 0cm"
class=MsoNormal align=center><B style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 14pt" lang=HR>INSTITUTA ZA FIZIKU,
INSTITUTA RUĐER BOŠKOVIĆ <o:p></o:p></SPAN></B></P>
<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 3pt 0cm"
class=MsoNormal align=center><B style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 14pt" lang=HR>I FIZIČKOG ODSJEKA
PMF-a<SPAN
style="FONT-VARIANT: small-caps"><o:p></o:p></SPAN></SPAN></B></P>
<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 3pt 0cm"
class=MsoNormal align=center><B style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 12pt"
lang=HR><o:p> </o:p></SPAN></B></P>
<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 3pt 0cm"
class=MsoNormal align=center><B style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 12pt" lang=HR>Institut za fiziku,
Bijenička cesta 46,<o:p></o:p></SPAN></B></P>
<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 3pt 0cm"
class=MsoNormal align=center><B style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 12pt" lang=HR>predavaonica u zgradi
Mladen Paić<o:p></o:p></SPAN></B></P>
<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 3pt 0cm"
class=MsoNormal align=center><B style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 14pt" lang=HR>Utorak, 22. prosinca
2015. u 11:00 sati<o:p></o:p></SPAN></B></P>
<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 3pt 0cm"
class=MsoNormal align=center><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 12pt"
lang=HR><o:p> </o:p></SPAN></P></TD></TR>
<TR style="mso-yfti-irow: 2">
<TD
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<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 0cm 0cm 0pt"
class=MsoNormal align=center><B><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 14pt" lang=HR>2D <SPAN
style="TEXT-TRANSFORM: uppercase">Dichalcogenide electronic materials and
devices</SPAN><o:p></o:p></SPAN></B></P>
<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 0cm 0cm 0pt"
class=MsoNormal align=center><B style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 8pt"
lang=HR><o:p> </o:p></SPAN></B></P></TD></TR>
<TR style="mso-yfti-irow: 3">
<TD
style="BORDER-BOTTOM: #d4d0c8; BORDER-LEFT: #d4d0c8; PADDING-BOTTOM: 0cm; BACKGROUND-COLOR: transparent; PADDING-LEFT: 5.4pt; WIDTH: 464.4pt; PADDING-RIGHT: 5.4pt; BORDER-TOP: #d4d0c8; BORDER-RIGHT: #d4d0c8; PADDING-TOP: 0cm"
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<P style="TEXT-ALIGN: center; LINE-HEIGHT: normal; MARGIN: 6pt 0cm"
class=MsoNormal align=center><B style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 12pt; mso-bidi-font-style: italic"
lang=HR>Andras Kis<o:p></o:p></SPAN></B></P></TD></TR>
<TR style="mso-yfti-irow: 4">
<TD
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<P style="TEXT-ALIGN: center; MARGIN: 0cm 0cm 0pt" align=center><B
style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; mso-bidi-font-style: italic"
lang=HR><o:p> </o:p></SPAN></B></P>
<P style="TEXT-ALIGN: center; MARGIN: 0cm 0cm 0pt" align=center><B
style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; mso-bidi-font-style: italic" lang=HR>École
Polytechnique Fédéral de Lausanne, Lausanne,
Switzerland<o:p></o:p></SPAN></B></P>
<P style="TEXT-ALIGN: center; MARGIN: 0cm 0cm 0pt" align=center><B
style="mso-bidi-font-weight: normal"><SPAN
style="FONT-FAMILY: Arial; FONT-SIZE: 8pt; mso-bidi-font-style: italic"
lang=HR><o:p> </o:p></SPAN></B></P>
<P style="TEXT-ALIGN: center; MARGIN: 6pt 0cm" class=MsoNormal
align=center><B style="mso-bidi-font-weight: normal"><I
style="mso-bidi-font-style: normal"><SPAN
style="LINE-HEIGHT: 115%; FONT-FAMILY: Arial; FONT-SIZE: 12pt"
lang=HR>E-mail: </SPAN></I></B><B
style="mso-bidi-font-weight: normal"><I><SPAN style="FONT-FAMILY: Arial"
lang=HR>andras.kis@epfl.ch<o:p></o:p></SPAN></I></B></P></TD></TR>
<TR style="mso-yfti-irow: 5">
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<P style="TEXT-ALIGN: justify; LINE-HEIGHT: normal; MARGIN: 0cm 0cm 10pt"
class=MsoNormal><SPAN style="FONT-FAMILY: Arial; FONT-SIZE: 12pt"
lang=HR>The discovery of graphene marked the start of research in 2D
electronic materials which was expanded in new directions with
MoS<SUB>2</SUB> and other layered semiconducting materials. They have a
wide range of promising potential applications, including those in digital
electronics, optoelectronics and flexible devices. Combining 2D materials
in heterostructures can increase their reach even
further.<o:p></o:p></SPAN></P>
<P style="TEXT-ALIGN: justify; LINE-HEIGHT: normal; MARGIN: 0cm 0cm 10pt"
class=MsoNormal><SPAN style="FONT-FAMILY: Arial; FONT-SIZE: 12pt"
lang=HR>In my talk, I will review our research in 2D materials beyond
graphene which started with the realisation of the first transistor based
on a 2D material other than graphene, a single layer of semiconducting
MoS<SUB>2</SUB>. I will present our recent efforts in growing 2D
semiconducting transition metal dichalcogenides (TMDCs), starting from
epitaxial growth of MoS<SUB>2</SUB> on sapphire with a high degree of
control over lattice orientation. Next, I will present our recent work on
electromechanical response of MoS<SUB>2</SUB> and graphene. I will finish
by presenting new optoelectronic devices based on the valley degree of
freedom in semiconducting monolayer TMDC materials<A
name=_GoBack></A>.<o:p></o:p></SPAN></P></TD></TR>
<TR style="mso-yfti-irow: 6">
<TD
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<P style="TEXT-ALIGN: justify; LINE-HEIGHT: 150%; MARGIN: 0cm 0cm 10pt"
class=MsoNormal><SPAN
style="LINE-HEIGHT: 150%; FONT-FAMILY: Arial; FONT-SIZE: 9pt"
lang=HR>Related references:<o:p></o:p></SPAN></P>
<P
style="TEXT-ALIGN: justify; LINE-HEIGHT: 150%; TEXT-INDENT: -14.2pt; MARGIN: 0cm 0cm 10pt 14.2pt; tab-stops: 14.2pt"
class=MsoNormal><SPAN
style="LINE-HEIGHT: 150%; FONT-FAMILY: Arial; FONT-SIZE: 9pt"
lang=HR>1.<SPAN style="mso-tab-count: 1">
</SPAN>Radisavljevic, B., A. Radenovic, J. Brivio, V. Giacometti, A. Kis.
Single-Layer MoS<SUB>2</SUB> Transistors. Nat. Nanotech. 6, 147–150
(2011); DOI:10.1038/nnano.2010.279.<o:p></o:p></SPAN></P>
<P
style="TEXT-ALIGN: justify; LINE-HEIGHT: 150%; TEXT-INDENT: -14.2pt; MARGIN: 0cm 0cm 10pt 14.2pt; tab-stops: 14.2pt"
class=MsoNormal><SPAN
style="LINE-HEIGHT: 150%; FONT-FAMILY: Arial; FONT-SIZE: 9pt"
lang=HR>2.<SPAN style="mso-tab-count: 1"> </SPAN>Krasnozhon,
D., D. Lembke, C. Nyffeler, Y. Leblebici, A. Kis. MoS<SUB>2</SUB>
Transistors Operating at Gigahertz Frequencies. Nano Lett. 14, 5905–5911
(2014); DOI:10.1021/nl5028638.<o:p></o:p></SPAN></P>
<P
style="TEXT-ALIGN: justify; LINE-HEIGHT: 150%; TEXT-INDENT: -14.2pt; MARGIN: 0cm 0cm 10pt 14.2pt; tab-stops: 14.2pt"
class=MsoNormal><SPAN
style="LINE-HEIGHT: 150%; FONT-FAMILY: Arial; FONT-SIZE: 9pt"
lang=HR>3.<SPAN style="mso-tab-count: 1"> </SPAN>Dumcenco, D.,
D. Ovchinnikov, K. Marinov, P. Lazić, M. Gibertini, N. Marzari, O. L.
Sanchez, Y.-C. Kung, D. Krasnozhon, M.-W. Chen, S. Bertolazzi, P. Gillet,
A. Fontcuberta i Morral, A. Radenovic, A. Kis. Large-Area Epitaxial
Monolayer MoS<SUB>2</SUB>. ACS Nano 9, 4611–4620 (2015);
DOI:10.1021/acsnano.5b01281.<o:p></o:p></SPAN></P>
<P
style="TEXT-ALIGN: justify; LINE-HEIGHT: 150%; TEXT-INDENT: -14.2pt; MARGIN: 0cm 0cm 10pt 14.2pt; tab-stops: 14.2pt"
class=MsoNormal><SPAN
style="LINE-HEIGHT: 150%; FONT-FAMILY: Arial; FONT-SIZE: 9pt"
lang=HR>4.<SPAN style="mso-tab-count: 1"> </SPAN>Manzeli, S.,
A. Allain, A. Ghadimi, A. Kis. Piezoresistivity and Strain-Induced Band
Gap Tuning in Atomically Thin MoS<SUB>2</SUB>. Nano Lett. 15, 5330–5335
(2015); DOI:10.1021/acs.nanolett.5b01689.<o:p></o:p></SPAN></P>
<P
style="TEXT-ALIGN: justify; LINE-HEIGHT: 150%; TEXT-INDENT: -14.2pt; MARGIN: 0cm 0cm 10pt 14.2pt; tab-stops: 14.2pt"
class=MsoNormal><SPAN
style="LINE-HEIGHT: 150%; FONT-FAMILY: Arial; FONT-SIZE: 9pt"
lang=HR>5.<SPAN style="mso-tab-count: 1"> </SPAN>Benameur, M.
M., F. Gargiulo, S. Manzeli, G. Autès, M. Tosun, O. V. Yazyev, A. Kis.
Electromechanical Oscillations in Bilayer Graphene. Nat. Commun. 6, 8582
(2015); DOI:10.1038/ncomms9582.<o:p></o:p></SPAN></P>
<P
style="TEXT-ALIGN: justify; LINE-HEIGHT: 150%; TEXT-INDENT: -14.2pt; MARGIN: 0cm 0cm 10pt 14.2pt; tab-stops: 14.2pt"
class=MsoNormal><SPAN
style="LINE-HEIGHT: 150%; FONT-FAMILY: Arial; FONT-SIZE: 9pt"
lang=HR>6.<SPAN style="mso-tab-count: 1"> </SPAN>Srivastava,
A., M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, A. Imamoğlu. Valley
Zeeman Effect in Elementary Optical Excitations of Monolayer
WSe<SUB>2</SUB>. Nat. Phys. 11, 141–147 (2015);
DOI:10.1038/nphys3203.<o:p></o:p></SPAN></P></TD></TR>
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<P style="LINE-HEIGHT: normal; MARGIN: 0cm 0cm 0pt" class=MsoNormal><B
style="mso-bidi-font-weight: normal"><SPAN style="FONT-FAMILY: Arial"
lang=HR>Voditelji seminara IF-a: Nataša Vujičić i Damir
Starešinić<o:p></o:p></SPAN></B></P>
<P style="LINE-HEIGHT: normal; MARGIN: 0cm 0cm 0pt" class=MsoNormal><B
style="mso-bidi-font-weight: normal"><SPAN style="FONT-FAMILY: Arial"
lang=HR><o:p> </o:p></SPAN></B></P></TD></TR></TBODY></TABLE>
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