[seminar] Seminar na IF-u, 22. prosinca 2015. u 11:00h

[Natasa Vujicic]

      ZAJEDNICKI KOLOKVIJ

      INSTITUTA ZA FIZIKU, INSTITUTA RUDER BOSKOVIC 

      I FIZICKOG ODSJEKA PMF-a

       

      Institut za fiziku, Bijenicka cesta 46,

      predavaonica u zgradi Mladen Paic

      Utorak, 22. prosinca 2015. u 11:00 sati

       
     
      2D Dichalcogenide electronic materials and devices

       
     
      Andras Kis
     
       

      École Polytechnique Fédéral de Lausanne, Lausanne, Switzerland

       

      E-mail: andras.kis at epfl.ch
     
      The discovery of graphene marked the start of research in 2D electronic materials which was expanded in new directions with MoS2 and other layered semiconducting materials. They have a wide range of promising potential applications, including those in digital electronics, optoelectronics and flexible devices. Combining 2D materials in heterostructures can increase their reach even further.

      In my talk, I will review our research in 2D materials beyond graphene which started with the realisation of the first transistor based on a 2D material other than graphene, a single layer of semiconducting MoS2. I will present our recent efforts in growing 2D semiconducting transition metal dichalcogenides (TMDCs), starting from epitaxial growth of MoS2 on sapphire with a high degree of control over lattice orientation. Next, I will present our recent work on electromechanical response of MoS2 and graphene. I will finish by presenting new optoelectronic devices based on the valley degree of freedom in semiconducting monolayer TMDC materials.
     
      Related references:

      1.   Radisavljevic, B., A. Radenovic, J. Brivio, V. Giacometti, A. Kis. Single-Layer MoS2 Transistors. Nat. Nanotech. 6, 147-150 (2011); DOI:10.1038/nnano.2010.279.

      2.   Krasnozhon, D., D. Lembke, C. Nyffeler, Y. Leblebici, A. Kis. MoS2 Transistors Operating at Gigahertz Frequencies. Nano Lett. 14, 5905-5911 (2014); DOI:10.1021/nl5028638.

      3.   Dumcenco, D., D. Ovchinnikov, K. Marinov, P. Lazic, M. Gibertini, N. Marzari, O. L. Sanchez, Y.-C. Kung, D. Krasnozhon, M.-W. Chen, S. Bertolazzi, P. Gillet, A. Fontcuberta i Morral, A. Radenovic, A. Kis. Large-Area Epitaxial Monolayer MoS2. ACS Nano 9, 4611-4620 (2015); DOI:10.1021/acsnano.5b01281.

      4.   Manzeli, S., A. Allain, A. Ghadimi, A. Kis. Piezoresistivity and Strain-Induced Band Gap Tuning in Atomically Thin MoS2. Nano Lett. 15, 5330-5335 (2015); DOI:10.1021/acs.nanolett.5b01689.

      5.   Benameur, M. M., F. Gargiulo, S. Manzeli, G. Autès, M. Tosun, O. V. Yazyev, A. Kis. Electromechanical Oscillations in Bilayer Graphene. Nat. Commun. 6, 8582 (2015); DOI:10.1038/ncomms9582.

      6.   Srivastava, A., M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, A. Imamoglu. Valley Zeeman Effect in Elementary Optical Excitations of Monolayer WSe2. Nat. Phys. 11, 141-147 (2015); DOI:10.1038/nphys3203.
     
      Voditelji seminara IF-a: Natasa Vujicic i Damir Staresinic

       
     

 
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